Abstract
Ruthenium (Ru) has been suggested as one of the promising materials for nanoscale interconnects to substitute copper (Cu) that is currently used in the semiconductor industry. Through density functional theory (DFT) calculations, we present the rationales for varying deposition behavior of Ru on different types of substrates. For the SiO2 and TiN substrates, with and without adsorbed hydrogen, our calculation results reveal the adsorption sites and their adsorption energy, the surface diffusion paths and their activation energy, and the surface diffusion coefficients. We confirm that the adsorption of Ru is more stable on TiN than on SiO2 substrates, and that the surface diffusion of Ru adatom is faster on TiN than on SiO2 surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
