Abstract
The structure and surface morphology of In overlayers on Si(100) surfaces were investigated as a function of substrate temperature and surface coverage using low-energy and reflection high-energy electron diffraction as well as Auger electron spectroscopy. Desorption kinetics of adsorbed In was studied with modulated-beam desorption and temperature-programmed desorption spectroscopies. Indium was found to grow on Si(100) according to a Stranski-Krastanov mechanism with the initial formation of several two-dimensional phases preceding the nucleation and growth of three-dimensional In islands. Binding energies and frequency factors were extracted from the desorption measurements using a model based on first-order desorption from several interdependent surface phases. First-order and zeroth-order kinetics were observed for the total desorbing flux from coexisting surface phases.
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