Abstract
Electrical properties of a Pt/C60/In/Al Schottky-barrier cell have been studied by an admittance measurement carried out in the frequency range between f=0.2 Hz and 100 kHz, and also by a current density–voltage (J–V) measurement. The J–V measurement shows that the rectification is caused due to the asymmetry of electron injection efficiencies from the electrodes. The conductance Gp and capacitance Cp are significantly affected by the localized charges produced by the injection from the electrodes or by illumination. From the frequency dependence of Gp and Cp, it is estimated that the dielectric relaxation time of the localized charges is ∼0.3 s and the value of NLξ2 at zero bias in the dark is of the order of 106 m-1, where NL is the density of the localized charges in the C60 layer and ξ is the distance which determines the electric dipole moment µ of a localized charge by the relationship µ=eξ. NLξ2 increases significantly by the application of a forward bias or by illumination.
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