Abstract
We present a combined experimental and theoretical study on the admittance spectroscopy of $\mathrm{Si}∕{\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}∕\mathrm{Si}$ single quantum well structures. Experimentally, the admittance spectra are measured for ${\mathrm{Si}}_{1\ensuremath{-}x}{\mathrm{Ge}}_{x}$-based two-dimensional hole gas systems. The dependence of the spectra on width of the quantum well and on content of Ge is investigated. Theoretically, in conjunction with the measurements we develop a simple and systematic approach to calculate the conductance and capacitance on the basis of a Boltzmann equation in which the emission rate induced by hole-phonon scattering is considered. We compare the theoretical results with those obtained experimentally and find that our model calculation can reproduce nicely the experimental findings.
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