Abstract
Admittance (ac) measurements were carried out to determine the interface trap density ( D it) as a function of energy E in the Si bandgap at interfaces of Si with different insulating oxides (Al 2O 3, ZrO 2, HfO 2). The results are compared to those of the conventional thermal SiO 2/Si interface. The results show that a significant portion of the interface trap density in the as-deposited and de-hydrogenated samples is related to the amphoteric Si dangling bond defects ( P b0 -centers). The D it is much enhanced for the Al-containing insulators as compared to Si/SiO 2 but can be reduced by annealing in O 2. As to annealing in H 2, efficient passivation of P b0 centers by hydrogen is achieved for Si/ZrO 2 and Si/HfO 2 interfaces, yet it fails for Si/Al-containing oxide entities. Among the insulators studied, the results suggest HfO 2 to be the best choice of an alternative insulator.
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