Abstract
The electronic properties of the interface between n-type Si and metallophthalocyanines (MPcs) have been investigated. Films of MPc (M=Co, Cu), with a thickness of 350nm, were deposited at room temperature by thermal evaporation and subsequently subjected to heat treatment in air at the temperature range 293–500K. The variation in the capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of the Al/MPc/n-Si/Al Schottky barrier devices have been systematically investigated as a function of frequencies in the frequency range of 42Hz–5MHz at different temperatures in the range of 210–473K. The effects of density of interface states (Nss) and series resistance (Rs) on I–V, C–V and G–V characteristics were investigated. The high-frequency capacitance (Cm) and conductance (Gm) values measured under reverse bias were corrected to decrease the effects of series resistance. Those results show that the locations of interface states between n-Si/MPc and series resistance have a significant effect on electrical characteristics of the Al/MpC/n-Si SB devices.
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