Admittance spectroscopy of a phosphorus-doped n-diamond homoepitaxial layer

Abstract

Generation and recombination processes of electrons through phosphorus (P) donor are analyzed by admittance spectroscopy for a Ni/Au Schottky contact on an n-diamond epilayer. The dependence of capacitance and conductance frequency on temperature is interpreted by Shockley–Read–Hall statistics. The thermal ionization energy and capture cross-section of P donor are evaluated to be 0.54 ± 0.02 eV and (4.5 ± 2.0) × 10 − 17 cm 2, respectively. Broadening of the conductance–frequency curve is observed, which is believed to be evidence of a long Debye tail of electron distribution at the depletion layer edge.