Abstract
We calculate the frequency-dependent admittance of a diode with a two-dimensional electron channel in a slot between strip-like contacts. Hydrodynamic electron transport equations coupled with a two-dimensional Poisson equation for the self-consistent electric potential are used. Using the calculated expression for the admittance, we analyze the effect of the planar contacts and external capacitance on the plasma oscillations in the system under consideration. The obtained results are useful for the interpretation of experimental observation of plasma effects in high-electron mobility transistors and optimization of terahertz devices based on these transistors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
