Adiabatic self-induced transparency in GaN/AlN inhomogeneously broadened quantum-dot ensemble

Abstract

The adiabatic self-induced transparency in an inhomogeneously broadened GaN/AlN quantum-dot ensemble is investigated numerically with a double-stimulated Raman adiabatic passage. The influence of resonant situation and pulse delay as well as pulse area on the transit pulse is explored. Under the condition considered in this paper, we get stronger transparent signal while near-resonance other than center-resonance. Additionally, the transparent signal intensity can be tuned by prolonging or shortening the delay time, which makes the intensity stronger or weaker respectively. Furthermore, increasing the pulse area can help to avoid inhomogeneous broadening, the adverse effect in quantum-dot ensemble, in adiabatic self-induced transparency process.