Abstract
In deep X-ray lithography, adhesion problems of resist structures are correlated to the spectral distribution of the synchrotron radiation source. For high energy sources, the contrast of an X-ray mask might become insufficient. This appears as a severe problem when the deep lithography process is used for mask replication involving a lower resist thickness on the order of a few tens of micrometers. To reduce the proportion of high energy photons in the radiation spectrum, a simple hard X-ray filtering system was developed. The central part of the vertical intensity distribution is blocked by a beam-stop acting as a low energy band-pass filter. Experiments with this device demonstrate an improved adhesion of 50 μm thick PMMA microstructures on a TiO x -plating base.
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