Adhesion and Cohesion Properties of Dot Resist Patterns Ranging from 84 to 364 nm Diameter Analyzed by Direct Peeling Method with Atomic Microscope Tip.

Abstract

By directly applying a load to top corner of a resist pattern with a microcantilever tip, a dot resist pattern adhering on a flat substrate can be collapsed easily by accompanied with slight residue. By the synchrotron radiation (SR) lithography, the dot resist patterns ranging from 84 to 364nm diameter and 550nm height are formed on the Si(100) substrate. The static load applied by the cantilever, which is required for pattern collapse, decreases with decreasing the pattern diameter and is proportional to the cross-sectional area of the resist pattern. In combination with the stress distribution analysis, the mechanism of pattern collapse and residue formation can be clarified. The pattern collapse occurs by the stress concentration at the pattern bottom slightly away from the interface. It is clear that the pattern collapse can be dominated by the stress concentration in the resist pattern.