Addressing sodium ion-related degradation in SHJ cells by the application of nano-scale barrier layers

Abstract

Silicon heterojunction (SHJ) solar cells are renowned for their high efficiency. However, SHJ solar cells are susceptible to various contaminants, leading to significant performance degradation when exposed to damp-heat conditions (e.g., 85 °C and 85% relative humidity). Sodium (Na) has been identified as one of the main contributors to degradation in silicon solar modules subjected to damp-heat conditions. This work investigates the role of an ultra-thin AlOx capping layer (∼10 nm) in preventing the failure in SHJ cells caused by Na-related contaminants. NaCl is applied directly to the solar cell, and the unencapsulated cell undergoes a damp heat test at 85 °C and 85% relative humidity (DH85). It is found that without the AlOx barrier layer, the SHJ cells experience a relative reduction in power of ∼30%rel after only 20 h at DH85. Both the front and rear sides of the cell degrade when exposed to NaCl. This is primarily due to a deterioration of the Ag contact resulting in increased series resistance (Rs), and decrease in fill factor (FF), and an increase in recombination, leading to a significant drop in open-circuit voltage (Voc), particularly when NaCl is applied on the rear side. However, when an AlOx barrier layer is applied to the SHJ cells, the performance losses caused by NaCl are significantly reduced to only ∼3.3%rel. The loss in Voc on the rear side is completely suppressed, and there is only a slight increase in Rs of ∼50%rel compared to ∼300%rel increase in Rs for cells without the AlOx barrier layer. These findings indicate that the ultra-thin AlOx barrier layer provides effective protection for SHJ cells against Na ions, mitigating both Rs and recombination losses. This AlOx barrier layer depositing method is compatible with existing industrial mass-production ALD tools and thus presents a viable solution at the cell level for SHJ cells.