Additive Modulated Perovskite Microstructures for High Performance Photodetectors.

Zhan Gao,Genjie Yang,Guancheng Huang,Yifan Zheng,Xinge Yu,Junsheng Yu

doi:10.3390/mi11121090

Abstract

Organic-inorganic hybrid perovskites have been widely used as light sensitive components for high-efficient photodetectors due to their superior optoelectronic properties. However, the unwanted crystallographic defects of perovskites typically result in high dark current, and thus limit the performance of the device. Herein, we introduce a simple route of microstructures control in MAPbI3 perovskites that associates with introducing an additive of 3,3,4,4-benzophenonetetracarboxylic dianhydridean (BPTCD) for crystallization adjustment of the perovskite film. The BPTCD additive can facilitate the formation of high-quality perovskite film with a compact and nearly pinhole-free morphology. Through characterizing the molecular interactions, it was found that the carbonyl groups in BPTCD is the key reason that promoted the nucleation and crystallization of MAPbI3. As a result, we obtained high-efficient and stable perovskite photodetectors with low dark current of 9.98 × 10−8 A at −0.5 V, an on/off ratio value of 103, and a high detectivity exceeding 1012 Jones over the visible region.

Highlights

Organic-inorganic hybrid perovskites have attracted enormous interest due to their superior optoelectronic properties, including high charge carrier mobility, long carrier diffusion length, and a broad range of bandgap [1,2,3,4,5,6,7,8,9,10]
We present a simple approach to tune the MAPbI3 microstructures and improve the film quality, by introducing a crystallization controlling additive of 3,3,4,4-benzophenonetetracarboxylic dianhydridean (BPTCD)
The enhancement of device stability is attributed to the high-quality perovskite film with decreased defects, since the defects at grain boundaries typical provide charge accumulation sites and infiltration pathways for water vapor in air [49]

Summary

Introduction

Organic-inorganic hybrid perovskites have attracted enormous interest due to their superior optoelectronic properties, including high charge carrier mobility, long carrier diffusion length, and a broad range of bandgap [1,2,3,4,5,6,7,8,9,10] These remarkable optoelectronic properties have provoked numerous researches on perovskite electronics, such as solar cells [1,2,3,4], light-emitting diodes [5,6,7], lasers [8,9,10] and photodetectors [11,12,13,14]. Based on the additive controlled high-quality perovskite film, we realized a high performance PePDs with a low Id of 9.98 × 10−8 A at −0.5 V, a high on/off ratio of 103, and a D* value 1012 Jones over visible region

Materials and Methods

Findings

Conclusions