Abstract
An additional resistance method (ARM) is proposed for the accurate and convenient extraction of separated source (RS) and drain (RD) resistances, which also include gate voltage (VGS) dependence, in MOSFETs. The ARM uses an analytical current-voltage relation in the linear operation of MOSFETs with two external resistors. In addition to VGS-dependent RS and RD, the channel carrier mobility is obtained by considering parasitic resistances in MOSFETs. The ARM is verified using experimental data obtained from n- and p-MOSFETs with W/L = 30 µm/0.7 µm.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
