Abstract
An additional resistance method (ARM) is proposed for the accurate and convenient extraction of separated source (RS) and drain (RD) resistances, which also include gate voltage (VGS) dependence, in MOSFETs. The ARM uses an analytical current-voltage relation in the linear operation of MOSFETs with two external resistors. In addition to VGS-dependent RS and RD, the channel carrier mobility is obtained by considering parasitic resistances in MOSFETs. The ARM is verified using experimental data obtained from n- and p-MOSFETs with W/L = 30 µm/0.7 µm.
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