Abstract
Adaptive biases are proposed for both the drain and the dummy gate of LDMOSFETs to improve their overall efficiency in amplification of highly modulated signals. At low input power, the drain bias is reduced to maintain high efficiency. At high input power, the dummy-gate bias is increased to maintain high linearity. By using such adaptive biases on both the drain and dummy gate, the measured efficiency on an LDMOSFET for a signal with a 9-dB peak-to-average modulation ratio is 16 percentage units higher than that with fixed biases and 5 percentage units higher than that with adaptive bias on the drain alone.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
