Abstract
To understand the laser doping conditions by the KrF excimer laser, a calculation was attempted using a commercially available TCAD (ATLAS by SILVACO). Compared with the experimental results, it was found that the difference occurred at the temperature calculation stage, and the cause was investigated. The factor of the difference is assumed to be that the crystal state of SiC changed (change in regime) due to laser irradiation. So, in addition to the legacy photothermal reaction, a new model was built on TCAD that included state changes due to photochemical reactions. As a result, the calculated and experimental results were more consistent.
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