Abstract
A new method to achieve real information recording with a density above 1 Tbit∕in.(2) in ferroelectric data storage systems is proposed. In this system, data bits were written in the form of the polarization direction, and the data were read by scanning nonlinear dielectric microscopy technique. The domain-switching characteristics of the virgin and inversely prepolarized media were compared, and the conditions of the pulse voltage for writing were optimized. As a result, actual data containing 64×64 bits were recorded at an areal density of 4 Tbit∕in.(2). The bit error rate was evaluated to be 1.2×10(-2).
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