Abstract
A general method for derivation of activity coefficient expressions for electrons and holes in semiconductors with a parabolic density of states is presented. Explicit expressions are given that include the effects of Fermi‐Dirac statistics and expressions for bandgap narrowing found in the literature. Bandgap narrowing terms associated with electron‐hole interactions are shown to be constrained by the requirement of thermodynamic consistency. Expressions for the activity coefficients are derived such that they are functions of carrier concentration, with the effects of dopant concentration included in the expression for the product. The activity coefficient expressions obtained in this way for the majority carriers are compared with the literature. Minority carrier activity coefficients were found to deviate significantly from unity due to a shift in the minority carrier bandedge associated with electron‐hole interactions.
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