Abstract
The tin oxide films were successfully deposited on Ti substrates by chemical vapor deposition (CVD) using a gas phase mixture of SnCl 4 and H 2O as a precursor at 550 °C. The physicochemical and electrochemical properties as well as the electrocatalytic activity of the Ti/SnO 2 electrodes prepared were investigated. It was found that the new electrodes had compact microstructure, high overpotential for oxygen evolution, and superior activity for pollutants oxidation. Over 95% chemical oxygen demand (COD) removal was achieved for oxidation of both phenol and oxalic acid, with current efficiencies (CE) of 59% for phenol and 62% for oxalic acid obtained.
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