Abstract
Temperature variations are one of the most crucial factors that need to be compensated for in MEMS sensors. Many traditional methodologies require an additional circuit to compensate for temperature. This work describes a new active temperature compensation method for MEMS capacitive strain sensors without additional circuits. The proposed method is based on a complement 2-D capacitive structure design. It consumes zero-power, which is essential toward the realization of a low-power temperature-compensated sensor in battery-powered or energy-harvesting applications. The gauge factor of the developed MEMS capacitive strain sensor is 7. The best result showing a capacitance variation of 1 ppm/°C compared with 13 ppm/°C on conventional design.
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