Abstract
In this paper, we demonstrate an active switching of extremely high Q-factor Fano resonances using vanadium oxide (VO2)-implanted THz asymmetric double C-shaped metamaterial (MM) structures. The simulation results indicate the highly temperature-sensitive nature of the double Fano resonances that can be switched at very low external thermal pumping (68 °C), which is only slightly higher than room temperature. We employ the surface current and electric field distributions of the structure to analyze the physical mechanism of the observed switching behavior in the thermally excited Fano MMs. More importantly, by optimizing the asymmetric parameter (offset length), the linewidth of the Fano resonance can reach only 0.015 THz and the Q-factor is as high as 98, which is one order of magnitude higher than that of the traditional MMs. The findings of this work would enable a thermally-induced high-Q Fano resonance MMs for ultra-sensitive sensors, modulators, low threshold switching in metadevices.
Highlights
The fifth-generation mobile communication technology (5G) has been initially realized and gradually began to be commercialized in the world
We demonstrate an active switching of extremely high-Q Fano resonances using
We have demonstrated an active switching of extremely high-Q Fano resonances by utilizing the VO2 -implanted THz symmetry-broken double C-shaped MMs
Summary
The fifth-generation mobile communication technology (5G) has been initially realized and gradually began to be commercialized in the world. Researchers have focused on tunable THz MMs with high Q-factor and modulation depth, and proposed different types of asymmetric Fano resonance structures, such as dipole bars [14], metal strip [15], ring structure [16], and planar defective [17]. The simulated surface current and electric field distributions of MM structures are employed to describe the resonance mechanism of the thermally excited Fano MMs. By optimizing the asymmetric parameters (offset length), the Q-factor of Fano resonance can achieve 98, which is one order of magnitude higher than that of the traditional MMs. By optimizing the asymmetric parameters (offset length), the Q-factor of Fano resonance can achieve 98, which is one order of magnitude higher than that of the traditional MMs This kind of high Q-factor MMs have tremendous potential in the fields of ultra-sensitive sensors, ultra-narrow band filters, and optical switches
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