Abstract
The electronic and optical properties of InP-based InGaAs/GaAsSbBi type-II quantum well (QW) structures are investigated theoretically. The detailed analyses of the InGaAs/GaAsSbBi type-II QW laser structures were based on a 14-band $\text {k}\cdot \text {p}$ model. The theoretical results indicate that adding Bi into InGaAs/GaAsSb type-II active regions on InP allows wavelength extension, but with minimal impact to transition matrix element. Moreover, the gain characteristics of the active region of laser were studied as a function of the Bi composition. It is shown that these type-II QW structures are suitable for mid-infrared (2– $4~{\mu }\text{m}$ ) operation at room temperature.
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