Abstract

We investigated the effect of active layer thickness on recombination kinetics of poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC71BM) based solar cells. Analysis of the fitted Lambert W-function of illuminated current density–voltage (J–V) characteristics revealed increased recombination processes with increased active layer thicknesses. The ideality factor extracted from PCDTBT:PCBM solar cells continuously increased from 1.89 to 3.88 when photoactive layer thickness was increased from 70 to 150nm. We found that such increase in ideality factor is closely related to the defect density which is increased with increased photoactive layer thickness beyond 110nm. Therefore, the different density of defect states in PCDTBT:PCBM solar cells causes the different recombination paths where solar cells with a thicker active layer (⩾110nm) are considered to undergo coupled trap-assisted recombination processes while single-defect trap-assisted recombination is dominant for thinner (70–90nm) PCDTBT:PCBM solar cells. As a result, we found that the optimal efficiencies of PCDTBT:PC71BM solar cells were limited to the active layers between 70 and 90nm. Particularly, when PCDTBT:PC71BM solar cells were optimized with an active layer thickness of 70nm, energy conversion efficiency reached 6.5% while an increase in thickness led to the reduction of efficiency to 4.7% at 133nm but then an increase to 5.02% at 150nm.

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