Abstract
This paper introduces an advanced gate driver used as thermal swing control method for the reduction of AC load current-related ΔT j in Insulated-Gate Bipolar Transistors (IGBTs). A switchable gate resistor network is applied to the advanced gate driver, so that the switching power losses can be changed according to the amplitude of AC current. Accordingly, a closed-loop thermal control method including the functions of root-mean-square calculation and phase analysis is proposed. Hence ΔT j can be reduced by means of changing losses-related gate resistors on the basis of output fundamental frequency and amplitude of AC load current. As a result, longer device useful life duration can be achieved. Furthermore, the maximum junction temperature under high-temperature operation can be reduced by means of the proposed method. Simulations and experiments are provided to validate the effectiveness of the proposed active gate driver.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
