Abstract
The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic disturbances, the common mode currents in the system were compared using the active and a standard gate voltage control (SGVC). The closed-loop analysis carried out in this paper has shown that discrete component-based design can introduce limitations to fully resolve the problem of high switching speeds. To ensure effective control of the switching operations, a response time fewer than 10 ns is required for this uncomplex closed-loop technique despite an increase in switching losses.
Highlights
Very high frequency operation capabilities of wide band-gap semiconductor devices made them good candidates for high efficiency of static converter [1,2,3,4,5]
The active gate voltage control (AGVC) has no This is the reason why the two peaks observed in the frequency domain with controls (AGVC and standard gate voltage control (SGVC)) occur at the same frequency
The voltage voltage at the terminal of Ls (VLs) created by the drain current during turn-on is used to control the driver 2 (Drv2) (Figure 12)
Summary
Very high frequency operation capabilities of wide band-gap semiconductor devices (such as GaN and SiC) made them good candidates for high efficiency of static converter [1,2,3,4,5]. One of the main disadvantages of passive control is a lack of compensation against the variations of the current and voltage parameters of the converter, which, increase switching losses. An open-loop passive control technique is presented in References [15,16,17] to mitigate this issue. In this technique, the switching process has been divided into several sequences while introducing a passive element for each sequence. Additional losses remain significant since the open-loop passive controls are unable to compensate for the variation in the converter parameters. The active driver circuit in Reference [19] presented the current transient (di/dt) control of an IGBT, based on a 50-nH common parasitic inductance between tthraenpsoiewnetr(adni/ddtth)eccoonnttrroollopfatahns.IFGoBrTG, abNas-ebdasoedn dae5si0g-nnsH, thcoeminmtroondupcatiroansiotifcsiuncdhuactpaanrcaesbietitcwveeanluteheispuonwaecrceapntdabthlee acosnthtreolppaartahssit.iFcotrraGnasNie-nbtassceadnddesaimgnasg,eththeeindtreovdicuectdiounrionfgsufacsht tarapnasriatsioitnics.vAalnueacitsivuenaclcocseepdta-lboloepascothnetrpolarbaassietidc otrnanascieanptascictaonr dloawmeargtehathne2d0envFicheadsubreinegn pfarsotptorasendsitfioornsa. (b) configuration-2 with a varying voltage at the source
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