Active dopant profiling of ultra shallow junction annealed with combination of spike lamp and laser annealing processes using scanning spreading resistance microscopy

Abstract

Depth profiles of a spreading resistance of ultra-shallow arsenic implanted into silicon with an energy of 3.0 keV and a dose of 1.0 × 1015ions/cm2 activated by a combination of conventional spike lamp and laser annealing processes were measured by scanning spreading resistance microscopy (SSRM) with a depth resolution of less than 5 nm. The lowest resistances at the arsenic activated region annealed by laser followed by spike lamp annealing (a laser first process) were lower than those by spike lamp annealing followed by laser annealing (a spike first process) with the same laser power densities. The lowest resistances at the arsenic activated region annealed by the laser and spike first processes with a laser power density of 0.39 kW/mm2 were lower than those with a laser power density of 0.36kW/mm2. The laser first process was suitable for the lower resistance regions than the spike first process.