Abstract
This work proposes a new methodology to improve the charge collection of an impacting ion in a FinFET in order to avoid this charge to affect device sensitive nodes. An internal electric field drives the charge generated by the ion track out of the sensitive device terminals. The simulations performed with TCAD tools in 22nm FinFET devices show that the amount of charge collected by these terminals can be reduced up to 37% by adopting the introduced methodology.
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