Abstract
A study has been made of the activation energy of the conductance of a p–n-4H-SiC 〈Al〉 structure created through the doping of silicon carbide with aluminum. The doping was implemented by a novel method of low-temperature diffusion, in which the diffusion of aluminum in silicon carbide is stimulated by a carbon- and silicon-vacancy flux produced by the oxidation of the silicon surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
