Abstract
AbstractThe Mg concentration dependence of the acceptor activation energy in Al0.25Ga0.75N and Al0.5Ga0.5N was investigated. Temperature‐dependent Hall effect measurements show that effective acceptor activation energy changes with a negative 1/3 power of Mg concentration, which means that the activation ratio increases with increasing Mg concentration. Similar to the case of GaN, however, overdoping of Mg causes serious compensation and a steep decrease of the hole concentration. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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