Abstract
The activation energy of electromigration in 'bamboo'-type, passivated Al-1% Si/TiN/Ti lines was determined by means of high resolution resistance measurements at wafer level. Both the very early stages, with a nonlinear behaviour of the resistance, and the subsequent stages, characterized by an approximately constant rate of resistance change, were analysed with an existing model that correlates electromigration and mechanical stress evolution. An activation energy could be extracted only in the phase of linear resistance increase, where a value of 0.95 eV was found. Diffusion at the interface between Al-Si and the barrier metal or the passivation could be responsible for this value of the activation energy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
