Abstract
The rate of electromigration in thin films of aluminum and aluminum alloyed with copper has been determined by measuring the changes in resistance of stripes subjected to a current density of 4 × 106 A/cm2. At temperatures in the range from 100 to 200°C the activation energy for electromigration has been found to have the same value for both the pure and the copper-alloyed samples, namely, 0.6 eV. However, the rate of migration is much smaller, by a factor as large as 100, in the copper-bearing samples. These results are discussed in terms of grain boundary diffusion and the effect of alloying additions on diffusion mechanisms.
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