Abstract
This work aims to research the crystallization transition kinetics aspects for Se60Ge15As25 and Se60Ge15Sn25 compositions, utilized differential thermal analysis technique under the non-isothermal condition at various heating rates. Crystallization temperature (Tc) has been discovered heating rate and composition dependence. Heating rate dependence of Tc reveals the activation energy of crystallization (Ec) values according to various methods. Kissinger, modified Kissinger, Takhor, Baswell, Augis-Benntt, Mahadeven and Gao-Wang methods are applied to determine (Ec). The outcome shows an unsuitable Takhor method for determination of the crystallization parameters of the studied composition. The highest value of Ec is observed for Se60Ge15As25 composition. This result is confirmed by frequency factor Ko, crystallization rate factor K data and attributed to the effective bands energies with As and Sn addition to host composition. The transformation mechanisms have been examined by the values of Avrami exponent n and dimensionality of growth m. According to Avrami index n, the crystallization mechanism was interpreted as two-dimensional growth for Se60Ge15 with Sn addition and three-dimensional growth with As addition.
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