Abstract
First results concerning the E( j) characteristics of thin epitaxial UPd 2Al 3 films as a function of the magnetic field oriented parallel to the film's c-axis are presented. The activation energy for flux creep E A was extracted from resistive transitions in applied magnetic fields. E A is found to be temperature independent, but depends linearly on the magnetic field B for B ⩾ 1 T. The critical current density reaches 6500 A/cm 2 at B = 1 T and T = 0.32 K.
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