Activation energies of the InSi‐Sii defect transitions obtained by carrier lifetime measurements

Abstract

Light‐induced degradation (LID) is investigated in indium doped silicon by time and temperature dependent carrier lifetime measurements. Different transitions rates and activation energies were measured and interpreted within the ASi‐Sii defect model. The case of indium acceptors is compared to the case of boron. Results are discussed within the frame of a comparison between ASi‐Sii and ASi‐Fei defects. It was found that reported dependencies of the transitions rates of the ASi‐Sii defect on the hole density support defect models which are based on defect configuration changes. An in‐depth explanation of the ASi‐Sii defect model is given and possible errors related to the measurement of transition rates are discussed.