Abstract
Nitrogen-doped p-type ZnSe, p-type ZnS ySe 1− y , and p-type Zn 1− x Mg x S y Se 1− y epilayers were grown on n-type GaAs (1 0 0) substrates by molecular beam epitaxy. Photoluminescence (PL) spectra for the p-type ZnSe and the lattice-matched p-type ZnS 0.06Se 0.94, and p-type Zn 0.92Mg 0.08S 0.12Se 0.88 epilayers showed a deep acceptor bound exciton emission and a donor–acceptor pair emission. Temperature-dependent PL measurements were carried out to determine the activation energies of these states. The activation energies of the acceptor-bound excitons and the donor–acceptor pairs were determined to be 40 and 65 meV in the p-type ZnSe epilayer, 20 and 45 meV in the p-type ZnS 0.06Se 0.94, and 45 and 43 meV in the p-type Zn 0.92Mg 0.08S 0.12Se 0.88 epilayers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
