Year-end Sale % OFF 
Abstract
MOS transistors in either SOS technology with oxidation temperature varations or laser-recrystallized SOI have been exposed to ionizing pulse in order to derive activation energy of oxide charge recovery. It is found a direct dependence of annealing activation energy on oxidation or on highest temperature, and on electric field. In case of SOI, substrate oxide must also be considered. Models are discussed, based on an exponential distribution of states above the valence band and/or on polaron effect.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
