Abstract
ABSTRACTThe ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400 °C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5×1015 cm−2) a high concentration of extended defects remains after 1100 °C anneals, but higher temperatures (1400 °C) produces a significant improvement in crystalline quality in the implanted region.
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