Abstract
We show in this study that deep-level transient spectroscopy is an effective means of revealing residual metallic impurities in commercial silicon which are electrically activated by rapid thermal processing (RTP). In particular we demonstrate that the dominant activated metallic impurity, detected after RTP (at temperatures of 800 and 1000°C for 10s) and serial sectioning from the front side or the back side of the samples, has an inhomogeneous distribution. This is characteristic for a getter effect and is similar to that observed for intentionally gold-doped samples followed by RTP. Serial sectioning in steps of about 25 μm allows us to establish a complete picture of what happens during RTP: activation and gettering of residual bulk impurities, as well as the activation of surface contaminants which have been introduced by the high temperature treatment.
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