Activated reactive evaporation of hydrogenated amorphous silicon

Abstract

Activated Reactive Evaporation (ARE) has been used to synthesize the plasma conditions present in glow discharge decomposition of silane. This allows hydrogentated amorphous silicon to be deposited at high rates (up to 0.5 um/min has been achieved). It is shown that the addition of negative r.f. bias on the substrate improves the film quality. Doping can be achieved by the addition of diborate for p-type and phosphine for n-type films.