Abstract
The doping technologies and doping profiling metrologies are facing huge challenges for nonplanar or 3-D devices and structures. Ambient-controlled scanning spreading resistance microscopy (AC-SSRM) has been developed and well established for 2-D cross-sectional doping profiling measurements on dynamic random access memory (DRAM) access devices. Good correlations between 2-D doping profiling measurements and device electrical performance have been demonstrated. Thanks to AC-SSRM 2-D cross-sectional doping profiling measurements, plasma doping (PLAD) process has been demonstrated beneficial on nonplanar or 3-D device manufacturing.
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