Abstract
By now we know almost nothing about works on production of p-3C-SiC. Probably, it is due to the fact that the basic acceptor impurity (aluminium) accumulates on the interfaces of the twins and other structural defects in the 3C film and it is electrically neutral. We managed to produce the highly doped layers p-3C based on the conducting substrates of hexagonal SiC using the method of Sublimation Epitaxy (SE). Probably, it is due to the growth high temperature used in this method. First, it results in production of the more structural-perfect epifilm and, second, in increasing the Al atomic mobility. This works purpose is further optimization of the production technology for epilayers p-3C-SiC with usage of semi-insulating substrates 6H-SiC.
Highlights
Silicon carbide has a possibility, if the chemical composition is the same, to crystallize in both a cubical polytype and in more than two hundred hexagonal and rhombohedral ones
It is known, when a cubical epilayer arises at once in several different points of the hexagonal substrate, the orientation of the 3С-SiC nucleuses along the growth surface can be of two types different with a 60° turn relative to each other
On the x-ray topograms derived in some Bragg reflexes, the twinning structure appears in the form of areas of black or white contrast (Fig. 1) which changes for an opposite one if the crystal turns 60° around the axis (111) (Andreev et al, 2002)
Summary
Silicon carbide has a possibility, if the chemical composition is the same, to crystallize in both a cubical polytype and in more than two hundred hexagonal and rhombohedral ones. In the hexagonal polytype the lattice constant does not differ from the lattice constant of the cubical polytype with the accuracy to three decimal places in the direction perpendicular to axis C. It is a rather perspective material for creation of different types of heterostructures (Lebedev, 2006). The 3C-SiC epilayers were grown using the method of Sublimation Epitaxy in vacuum (SE) (Lebedev et al, 2001b). The 3C-SiC epilayers were grown at temperatures 1700-2100°С, the time of growth is 15 min. The method of photoluminescence (FL) was applied to identify the polytype of the grown epilayer. The concentrations of uncompensated acceptors (NaNd) in the samples were specified following the capacitor-voltage characteristics (C-U) on the standard stand with a parallel equivalent circuit and sinusoidal frequency 10 kHz at room temperature
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