Abstract
An extended set of measuring data on current saturation and the involved current- and displacement fluctuations occurring in acoustoelectrically active, n-type, photoconducting CdS single-crystals is presented. A photoelectric beat spectrometer for the measurement of displacement fluctuations of acoustoelectrically active semiconductors, operating under pulsed bias conditions is described. It turned out that the observed current noise spectra of crystals provided with unpolished endfaces are in good agreement with theory. For crystals with polished plane parallel endfaces, however, deviations in the current noise spectra were observed in the same frequency range where displacement fluctuations were apparent. The observed low-frequency displacement fluctuations of the end-surface of the polished crystals could be interpreted as down-converted high-frequency acoustic activity which was acoustoelectrically amplified from the thermal background.
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