Acoustoelectric conversion in semiconductor devices

Abstract

In semiconductor crystals, elastic deformation causes a shift of the energy levels and a change in the spectrum of the charge carriers. As a result of this, a deformation of p-n junctions causes a noticeable change in the height of their potential barrier and a corresponding change in the forward and back currents. Under these conditions, the smallness of the deformation-potential constants causes a change in the direct current of the p-n junction to be observed for fairly high values of the static pressure and relative deformation (see [1]). However, the effect of a variable deformation is much easier to detect. Moreover, a variable elastic deformation may influence the noise characteristics of semiconductor devices. The present work presents the results of investigating the effect of ultrasonic deformation on the operation of semiconductor devices under conditions when the deformation period was substantially longer than the relaxation time of the charge carriers. Here the ultrasonic deformation may be treated as being quasistatic, while the observed conversion of ultrasonic waves to electrical waves may be considered within the framework of the deformation potential.