Abstract
We use recently determined values of conduction- and valence-band edge deformation potentials to analyze two-dimensional electron and hole mobilities in $\frac{\mathrm{GaAs}}{{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}}\mathrm{As}$ modulation-doped heterostructures. Contrary to the commonly accepted view, it is shown that a consistent description of low-temperature mobility can be given only if the short-range deformation potential scattering is not screened by free carriers.
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