Abstract

Chemically inert 40 keV Ar+ ions were implanted into fused SiO2 with doses in the range of 1×1014 to 1×1016 ion/cm2. The implanted specimens were subjected to the localized impact damaging by a pointed striker. The acoustic emission method was applied to assess the dependence of the microcracking process on the implantation dose. The fractoluminescence method showed the generation of non-bridged oxygen hole centers (NBOHC) [Si–O–] in newly formed microcracks. The performed experiments revealed a critical fluence, which affected in a non-linear manner the fractoluminescent activity due to changes in the mechanical properties of the Ar+-treated surface layer. An interplay between random and correlated damage accumulation at various structural levels was demonstrated.

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