Abstract
The effect of ultrasonic treatment (UST) on the current-voltage (I-U) characteristics of Au-TiBx-n-n +-GaAs diode structures has been studied. Upon acoustic loading with an intensity below 2 W/cm2, the character of the UST-induced changes in the reverse branches of I-U curves depends on the predominating mechanism of current transfer. UST at a power density above 2.5 W/cm2 increases the reverse current by one or two orders of magnitude. It is shown that UST favors a significant increase in the homogeneity of the characteristics of devices manufactured using integral heat sink technology.
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