Acoustic phonons in multilayer nitride-based AlN/GaN resonant tunneling structures

Abstract

The study of physical processes associated with acoustic phonons in nitride-based nanosystems is of great importance for the effective operation of modern nanoscale devices. In this paper, a consistent theory of acoustic phonons arising in multilayer nitride-based semiconductor resonant tunneling structures, that can function as a separate cascade of a quantum cascade laser or detector is proposed. Using the physical and geometric parameters of a typical nanostructure, the spectrum of various types of acoustic phonons and the corresponding normalized components of the elastic displacement vector are calculated. It has been established that the spectrum of acoustic phonons of a multilayer nanostructure consists of two groups of the shear phonons dependencies and three groups of dependencies for a mixed spectrum of flexural and dilatational phonons. The dependencies of the acoustic phonons spectrum of the nanostructure and the components of the elastic displacement vector on its geometric parameters are studied. It has been established that for the components of the displacement vector u2 for shear phonons have a decrease in the absolute values of their maxima with increasing of energy level number. The components u1 and u3 of flexural and dilatational phonons behave respectively as symmetric and antisymmetric functions relatively the center of an separate selected layer of the nanostructure. The proposed theory can be further applied to study the interaction of electrons with acoustic phonons in multilayer resonant tunneling structures.