Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

Abstract

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature $(T)$ and carrier density $(n)$. We find a temperature-dependent phonon-limited resistivity ${\ensuremath{\rho}}_{\mathit{ph}}(T)$ to be linear in temperature for $T\ensuremath{\gtrsim}50\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ with the room-temperature intrinsic mobility reaching the values of above ${10}^{5}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.2em}{0ex}}\mathrm{s}$. We comment on the low-temperature Bloch--Gr\"uneisen behavior where ${\ensuremath{\rho}}_{\mathit{ph}}(T)\ensuremath{\sim}{T}^{4}$ for unscreened electron-phonon coupling.