Abstract
Acoustoelectric domains consisting of high intensity ultrasonic waves with wide frequency components of 0.1 to 4 GHz are amplified in semiconducting CdS and injected to other semiconductors. The transmission efficiency was found to be 5–90% depending upon the frequency. By making use of the acoustic domain injection method, we measured some acoustic properties: acoustic domain transmission efficiency and attenuation coefficient. Further, we investigated the resonant Brillouin scattering of various semiconductors and determined the spectral dependence of the Brillouin scattering cross sections near the fundamental absorption edge.
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