Acoustic charge transport in GaN nanowires

Abstract

We present acoustic charge transport in GaN nanowires (GaN NWs). The GaN NWs were grownby molecular beam epitaxy (MBE) on silicon(111) substrates. The nanowires were removed fromthe silicon substrate, aligned using surface acoustic waves (SAWs) on the piezoelectric substrateLiNbO3 and finally contacted by electron beam lithography. Then, a SAW was used to create anacoustoelectric current in the GaN NWs which was detected as a function ofradio-frequency (RF) wave frequency and its power. The presented method and ourexperimental findings open up a route towards new acoustic charge transport nanostructuredevices in a wide bandgap material such as GaN.